能源学院学术报告:Controlling and Tailoring the Electronic Properties of Chemically Reactive 2D Materials

报告题目Controlling and Tailoring the Electronic Properties of Chemically Reactive 2D Materials



报告人:Prof. Mark C. Hersam, Department of Materials Science and Engineering, Northwestern University, United States



        Following the success of ambient-stable two-dimensional (2D) materials such as graphene and hexagonal boron nitride, new classes of chemically reactive layered solids are being explored since their unique properties hold promise for improved device performance [1]. For example, chemically reactive 2D semiconductors (e.g., black phosphorus (BP) and indium selenide (InSe)) have shown enhanced field-effect mobilities under controlled conditions that minimize ambient degradation [2,3]. In addition, 2D boron (i.e., borophene) is an anisotropic metal with a diverse range of theoretically predicted phenomena including confined plasmons, charge density waves, and superconductivity [4], although its high chemical reactivity has limited experimental studies to inert ultrahigh vacuum conditions [5-8]. Therefore, to fully study and exploit the majority of 2D materials, methods for mitigating or exploiting their relatively high chemical reactivity are required [9]. In particular, covalent organic functionalization of BP minimizes ambient degradation, provides charge transfer doping, and enhances field-effect mobility [10]. In contrast, noncovalent organic functionalization of borophene leads to the spontaneous formation of electronically abrupt lateral organic-borophene heterostructures [11]. By combining organic and inorganic encapsulation strategies, even highly chemically reactive 2D materials (e.g., InSe) can be studied and utilized in ambient conditions [12].


Selected Publications:


[1] A. J. Mannix, et al., Nature Reviews Chemistry, 1, 0014 (2017).

[2] D. Jariwala, et al., Nature Materials, 16, 170 (2017).

[3] J. Kang, et al., Advanced Materials, 30, 1802990 (2018).

[4] A. J. Mannix, et al., Nature Nanotechnology, 13, 444 (2018).

[5] A. J. Mannix, et al., Science, 350, 1513 (2015).

[6] G. P. Campbell, et al., Nano Letters, 18, 2816 (2018).

[7] X. Liu, et al., Nature Materials, 17, 783 (2018).

[8] X. Liu, et al., Nature Communications, 10, 1642 (2019).

[9] C. R. Ryder, et al., ACS Nano, 10, 3900 (2016).

[10] C. R. Ryder, et al., Nature Chemistry, 8, 597 (2016).

[11] X. Liu, et al., Science Advances, 3, e1602356 (2017).

[12] S. A. Wells, et al., Nano Letters, 18, 7876 (2018).





 Prof. Mark C. Hersam

Materials Science and Engineering, Northwestern University

2220 Campus Drive, Evanston, IL 60208-3108 USA

Tel: 847-491-2696; Fax: 847-491-7820

E-mail: 在2015年夏日

WWW: http://www.hersam-group.northwestern.edu/


        Mark C. Hersam is the Walter P. Murphy Professor of Materials Science and Engineering and Director of the Materials Research Center at Northwestern University. He also holds faculty appointments in the Departments of Chemistry, Applied Physics, Medicine, and Electrical Engineering. He earned a B.S. in Electrical Engineering from the University of Illinois at Urbana-Champaign (UIUC) in 1996, M.Phil. in Physics from the University of Cambridge (UK) in 1997, and a Ph.D. in Electrical Engineering from UIUC in 2000. His research interests include nanomaterials, nanomanufacturing, scanning probe microscopy, nanoelectronic devices, and renewable energy. Dr. Hersam has received several honors including the Presidential Early Career Award for Scientists and Engineers, TMS Robert Lansing Hardy Award, AVS Peter Mark Award, MRS Outstanding Young Investigator, U.S. Science Envoy, MacArthur Fellowship, and seven Teacher of the Year Awards. An elected member of the National Academy of Inventors, Dr. Hersam has founded two companies, NanoIntegris and Volexion, which are commercial suppliers of nanoelectronic and battery materials, respectively. Dr. Hersam is a Fellow of MRS, AVS, APS, AAAS, SPIE, and IEEE, and also serves as an Associate Editor of ACS Nano.



Mark C. Hersam,美国西北大学材料科学与工程Walter P. Murphy教授,材料研究中心主任,为全球顶尖学术组织IEEE会士、World Technology Network会士,MRS会士、AAAS会士、APS会士、AVS会士、SPIE会士,2018年全球高被引科学家。目前担任ACS Nano(IF13.9) 杂志副主编,Applied Physics Letters编委,NSF国际纳米科学与工程协会主席。Mark C. Hersam亦是NanoIntegris公司(an elected member of National Academy of Inventors)的共同创始人。至今已获得多项奖项和荣誉称号,2016年被任命为美国科学大使,2014年获得麦克阿瑟“天才奖”(MacArthur Fellow),2013年获得国家自然科学基金委创新特别奖,2011年获得W.M.Keck基础科学与技术研究奖,2010年获得MRS杰出青年科学家,2010年获得ECS青年科学家奖,2006年获得AVS Peter Mark奖,2006年获得TMS Robert Lansing Hardy奖,2005年获得美国青年科学家总统奖“Presidential Early Career Awards for Scientists and Engineers”。至今已在Nature, Science, Nature Chemistry, Nature Nanotechnology等国际顶尖期刊上发表学术论文500余篇,h-index高达89,他引次数高达34478i10指数为347

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